RMM2080
2-18 GHz Wideband Variable-Gain
Driver Amplifier
PRODUCT INFORMATION
Description
The Raytheon RMM2080 GaAs MMIC device is a three-stage distributed medium-power amplifier with gain control
capability. The circuit incorporates ion-implanted, 0.5-
碌
m gate MESFET devices fabricated on a semi-insulating
GaAs substrate. The first two stages are 4-cell distributed amplifiers utilizing dual-gate FETs for improved gain per
stage and to facilitate gain control (4x125碌m & 4x250碌m). The third stage is a 3-cell distributed dual-gate FET
amplifier designed for high output power and efficiency (3x500碌m). The RMM2080 amplifier is designed for
interconnection with microstrip transmission media using fully automatic assembly techniques.
Features
2-18 GHz Bandwidth
24 dB Typical Gain
鹵2 dB Gain Flatness
20 dBm Output Power Typical
Three Stages of Distributed Amplification
Gain Control of up to 70 dB range
Dual-Gate Ion-Implanted 0.5
碌
m FETs
Chip Size: 4.14mm x 3.22mm x 0.1mm
Absolute
Maximum
Ratings
Parameter
Positive Drain DC Voltage (+7V typ)
Negative DC Voltage
Simultaneous (Vd-Vg)
Positive DC Current
RF Input Power (from 50
鈩?/div>
source)
Operating Baseplate Temperature
Storage Temperature Range
Thermal Resistance
(channel to backside)
Symbol
Vd
Vg
Vgd
Id
P
IN
(CW)
T
case
T
storage
R
jc
Value
+8
-2
10
400
+8
-30 to 85
-55 to 125
22
Unit
V
V
V
mA
dBm
擄C
擄C
擄C/W
Electrical
Characteristics
(At 25擄C)
50
鈩?/div>
system,
Vd=+7 V,
Quiescent current (Idq)
=300 mA
GC1, GC2= +1.5 V
Parameter
Frequency Range
Gate Supply Voltage (Vg)
1
RF Output Power @ -1 dBc
Small Signal Gain
Gain Flatness vs. Freq.
Input/Output Return Loss
Min
2
Typ
-
-0.7
20
24
鹵2
7
Max
18
Unit
GHz
Volts
dBm
dB
dB
dB
Parameter
Gain Control Range
Gain Control Voltage,
GC1&2
2
Min
70
-5
Typ
Max
+1.5
Unit
dB
Volts
18
Notes:
1. Typical range of the negative gate voltage is -0.9 to 0.0V to set typical Idq of 300 mA.
2. GC1 and GC2 of +1.5V and VG23=open corresponds to maximum gain and power.
Characteristic performance data and specifications are subject to change without notice.
www.raytheonrf.com
Revised January 25, 2002
Page 1
Raytheon RF Components
362 Lowell Street
Andover, MA 01810
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