鈩?/div>
source)
Operating Case Temperature Range
Storage Temperature Range
Ratings
+10
-5
+5
-30 to +85
-40 to +100
Units
V
V
dBm
擄C
擄C
Electrical Characteristics
2
Parameter
Frequency Range
Gain (Small Signal) Over 1930鈥?990 MHz
Gain Variation
Over Frequency Range
Over Temperature Range
Noise Figure
P1dB Output
Output Power @ CDMA
3
PAE @ 33 dBm Pout
OIP3
4
Drain Voltage (Vdd)
Gate Voltage (VG1, 2 and VG3)
5
Quiescent currents (Idq1, 2 and Idq3)
5
Thermal Resistance (Channel to Case) R
JC
33
43
-2
180, 445
11
24
45
7.0
-0.25
Min
1930
30
鹵1.0
鹵1.5
6
30
Typ
Max
1990
Units
MHz
dB
dB
dB
dB
dBm
dBm
%
dBm
V
V
mA
擄C/W
Notes:
1. Only under quienscent conditions鈥攏o RF applied.
2. V
DD
= 7.0V, T
C
= 25擄C. Part mounted on evaluation board with input and output matching to 50
鈩?/div>
.
3. 9 Channel Forward Link QPSK Source; 1.23 Mbps modulation rate. CDMA ACPR1 is measured using the ratio of the average power within the 1.23 MHz channel
at band center to the average power within a 30 KHz bandwidth at an 885 KHz offset. Minimum CDMA output power is met with ACPR1 > 36 dBc.
4. OIP3 specifications are achieved for power output levels of 27 and 30 dBm per tone with tone spacing of 1.25 MHz at band-center with adjusted supply and bias
conditions of Vdd = 6.5V and IdqTotal = 625mA (see Note 5).
5. VG1,2 and VG3 must be individually adjusted to achieve IDQ1,2 and IDQ3. A single VGG bias supply adjusted to achieve IDQTOTAL = 625mA can be used with
nearly equivalent performance. Values for IDQ1,2 and IDQ3 shown have been optimized for CDMA operation. IDQ1, 2 and IDQ3 (or IDQTOTAL) can be adjusted
to optimize the linearity of the amplifier for other modulation systems.
The device requires external input and output matching to 50
鈩?/div>
as shown in Figure 3 and the Parts List.
漏2004 Fairchild Semiconductor Corporation
RMBA19500A Rev. C
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