ROITHNER LASERTECHNIK
A-1040 WIEN, FLEISCHMANNGASSE 9
TEL: +43 -1- 586 52 43 FAX: +43 -1- 586 41 43
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT904-20G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure:
GaAlAs double heterostructure
Lasing wavelength:
904 nm typ., singlemode
Max. optical power:
20 mW
Package:
9 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
NOTE!
LASERDIODE
MUST BE COOLED!
Absolute Maximum Ratings (Tc=25擄C)
CHARACTERISTIC
SYMBOL
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operating Temperature
T
C
Storage Temperature
T
STG
RATING
25
2
30
-60 .. +60
-70 .. +85
UNIT
mW
V
V
擄C
擄C
Optical-Electrical Characteristics (Tc = 25擄C)
CHARACTERISTIC SYMBOL TEST CONDITION
Threshold Current
I
th
cw
Operation Current
I
op
P
o
= 20 mW
Operation Voltage
U
op
P
o
= 20 mW
Lasing Wavelength
P
o
= 20 mW
位
p
Beam Divergence
P
o
= 20 mW
胃
//
Beam Divergence
P
o
= 20 mW
胃
鈯?/div>
Monitor Current
I
m
P
o
= 20 mW
MIN TYP MAX
120 140 160
175 190
2.2
890 904 910
7
10
13
15
30
35
0.6
1
1.2
UNIT
mA
mA
V
nm
擄
擄
mA
1
