ROITHNER LASERTECHNIK
A-1040 VIENNA, SCHOENBRUNNER STRASSE 7, AUSTRIA
TEL: +43 -1- 586 52 43-0 FAX: +43 -1- 586 52 43-44
e-mail: office@roithner-laser.com http://www.roithner-laser.com
RLT1020-500G
TECHNICAL DATA
High Power Infrared Laserdiode
Structure:
InGaAs quantum well
Lasing wavelength:
1020 nm typ., multimode
Max. optical power:
600 mW, 1 x 100 碌m虜 aperture
Package:
9 mm
PIN CONNECTION:
1) Laser diode cathode
2) Laser diode anode and photodiode cathode
3) Photodiode anode
LASERDIODE
MUST BE COOLED!
NOTE!
Maximum Ratings (Tc=25擄C)
CHARACTERISTIC
SYMBOL
Optical Output Power
P
o
LD Reverse Voltage
V
R(LD)
PD Reverse Voltage
V
R(PD)
Operating Temperature
T
C
Storage Temperature
T
STG
RATING
600
2
30
-40 .. +50
-70 .. +85
UNIT
mW
V
V
擄C
擄C
Optical-Electrical Characteristics (Tc = 25擄C)
CHARACTERISTIC SYMBOL TEST CONDITION
Optical Output Power
P
o
Threshold Current
I
th
Operation Current
I
op
P
o
= 500 mW
Operation Voltage
U
op
P
o
= 500 mW
Lasing Wavelength
位
p
P
o
= 500 mW
Spectral Width
FWHM
鈭單?/div>
P
o
= 500 mW
Beam Divergence
胃
//
P
o
= 500 mW
Beam Divergence
胃
鈯?/div>
P
o
= 500 mW
Differential Efficiency
dP
o
/dI
op
P
o
= 500 mW
Monitor Current
I
m
P
o
= 500 mW
MIN
990
7
15
0.4
150
TYP
500
300
790
1.5
1020
10
10
30
0.7
350
MAX
UNIT
mW
350
mA
820
mA
1.6
V
1040
nm
nm
13
擄
35
擄
1.0 mW/mA
600
碌A(chǔ)
1
2
