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RLP1N08LE Datasheet

  • RLP1N08LE

  • 1A, 80V, 0.750 Ohm, Current Limited, N-Channel Power MOSFET

  • 9頁

  • INTERSIL   INTERSIL

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RLP1N08LE
Data Sheet
April 1999
File Number
2252.3
1A, 80V, 0.750 Ohm, Current Limited,
N-Channel Power MOSFET
The RLP1N08LE is a semi-smart monolithic power circuit
which incorporates a lateral bipolar transistor, two resistors,
a zener diode, and a PowerMOS transistor. Good control of
the current limiting levels allows use of these devices where
a shorted load condition may be encountered. 鈥淟ogic level鈥?/div>
gates allow this device to be fully biased on with only 5V
from gate to source. The zener diode provides ESD
protection up to 2kV. These devices can be produced on the
standard PowerMOS production line.
Formerly developmental type TA09842.
Features
鈥?1A, 80V
鈥?r
DS(ON)
= 0.750鈩?/div>
鈥?I
LIMIT
at 150
o
C = 1.5A Maximum
鈥?Built-in Current Limiting
鈥?ESD Protected
鈥?Controlled Switching Limits EMI and RFI
鈥?Speci鏗乪d for 150
o
C Operation
鈥?Temperature Compensated Spice Model Provided
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RLP1N08LE
PACKAGE
TO-220AB
BRAND
L1N08LE
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-435
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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