RLP1N06CLE
Data Sheet
July 1999
File Number
2839.4
1A, 55V, 0.750 Ohm,Voltage Clamping,
Current Limited, N-Channel Power
MOSFET
The RLP1N06CLE is an intelligent monolithic power circuit
which incorporates a lateral bipolar transistor, resistors,
zener diodes, and a PowerMOS transistor. The current
limiting of this device allows it to be used safely in circuits
where it is anticipated that a shorted load condition may be
encountered. The drain to source voltage clamping offers
precision control of the circuit voltage when switching
inductive loads. Logic level gates allow this device to be fully
biased on with only 5V from gate to source. Input protection
is provided for ESD up to 2kV.
Formerly developmental type TA09880.
Features
鈥?1A, 55V
鈥?r
DS(ON)
= 0.750鈩?/div>
鈥?I
LIMIT
at 150
o
C = 1.1A to 1.5A Maximum
鈥?Built-in Voltage Clamp
鈥?Built-in Current Limiting
鈥?ESD Protected, 2kV Minimum
鈥?Controlled Switching Limits EMI and RFI
鈥?175
o
C Rated Junction Temperature
鈥?Logic Level Gate
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RLP1N06CLE
PACKAGE
TO-220AB
BRAND
L1N06CLE
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-428
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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