N-Channel Junction FET
RJN1163
Electret Capacitor Microphone Applications
Features
Specially suited for use in audio and
telephone electret capacitor microphones
Excellent voltage gain
Very low noise
High ESD voltage
Ultra-small size package
Package Type : SOT-300
[unit:mm]
1.60
鹵0.05
0.31
鹵0.03
0.12
鹵0.03
3
1.40
鹵0.01
0.80
鹵0.05
0~0.02
Applications
Cellular phones
Portable audio
PDAs
MP3 players
1
0.21
鹵0.03
0.5
鹵0.05
2
0.21
鹵0.03
0.5
鹵0.05
MAX 0.34
[TOP VIEW]
[SIDE VIEW]
1. Drain
2. Source
3. Gate
Absolute Maximum Ratings at Ta = 25
o
C
Parameter
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Junction Temperature
Storage Temperature
Symbol
V
GDO
I
G
I
D
P
D
Tj
Tstg
Ratings
-20
10
10
100
150
-55 to +150
Unit
V
mA
mA
mW
o
o
C
C
Electrical Characteristics at Ta = 25
o
C
Parameter
Gate-to-Drain Breakdown Voltage
Cutoff Voltage
Zero-Gate Voltage Drain Current
Forward Transfer Admittance
Input Capacitance
Reverse Transfer Capacitance
Symbol
V
(BR)GDO
V
GS(off)
I
DSS
|yfs|
Ciss
Crss
Conditions
I
G
= -100碌A(chǔ)
V
DS
= 5V, I
D
= 1碌A(chǔ)
V
DS
= 5V, V
GS
= 0
V
DS
= 5V, V
GS
= 0, f = 1kHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
V
DS
= 5V, V
GS
= 0, f = 1MHz
Min
-20
-0.2
70*
0.4
Ratings
Typ
Max
-0.6
1.2
3.5
0.8
-1.5
430*
Unit
V
V
碌A(chǔ)
mS
pF
pF
* The RJN1163 is classified by I
DSS
as follows
Classification
A1
I
DSS
(碌A(chǔ))
70~120
A2
100~170
B
150~270
C
210~350
D
320~430
RFsemi Technologies, Inc.
Rev. 4
1
2
3
4
