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RHU002N06 Datasheet

  • RHU002N06

  • Switching (60V, 200mA)

  • 5頁(yè)

  • ROHM

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RHU002N06
Transistors
Switching (60V, 200mA)
RHU002N06
Features
1) Low on-resistance.
2) High ESD.
3) High-speed switching.
4) Low-voltage drive (4V).
5) Easily designed drive circuits.
6) Easy to use in parallel.
External dimensions
(Unit : mm)
(1)
0.65 0.65
0.3
(3)
1.25
2.1
0.15
0.2
(2)
0.1Min.
0~0.1
Structure
Silicon N-channel
MOSFET transistor
Each lead has same dimensions
Abbreviated symbol : KP
ROHM : UMT3
EIAJ : SC-70
JEDEC : SOT-323
0.7
0.9
1.3
2.0
(1) Source
(2) Gate
(3) Drain
Equivalent circuit
(3)
(2)
鈭?/div>
Gate Protection Diode.
(1)
(1)
Source
(2)
Gate
(3)
Drain
鈭?/div>
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when fixed voltages are
exceeded.
Absolute maximum ratings
(Ta=25擄C)
Parameter
Drain-source voltage
Gate-source voltage
Continuous
Drain current
Pulsed
Continuous
Source current
Pulsed
Symbol
V
DSS
V
GSS
I
D
I
DP
I
S
I
SP
鈭?
P
D
Tch
Tstg
鈭?
鈭?
Limits
60
鹵20
200
800
200
800
200
150
鈭?5
to
+
150
Unit
V
V
mA
mA
mA
mA
mW
藲C
藲C
Total power dissipation
Channel temperature
Storage temperature
鈭?
Pw鈮?0碌s, Duty cycle鈮?%
鈭?
Each terminal mounted on a recommended
1/4

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