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RHRU7570 Datasheet

  • RHRU7570

  • 75A, 700V - 1000V Hyperfast Diodes

  • 64.10KB

  • 4頁

  • INTERSIL   INTERSIL

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RHRU7570, RHRU7580, RHRU7590, RHRU75100
Data Sheet
April 1995
File Number
3925.1
75A, 700V - 1000V Hyperfast Diodes
RHRU7570, RHRU7580, RHRU7590 and RHRU75100
(TA49068) are hyperfast diodes with soft recovery character-
istics (t
RR
< 85ns). They have half the recovery time of
ultrafast diodes and are silicon nitride passivated ion-
implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and recti鏗乪rs in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Features
鈥?Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
鈥?Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
鈥?Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . .1000V
鈥?Avalanche Energy Rated
鈥?Planar Construction
Applications
鈥?Switching Power Supplies
鈥?Power Switching Circuits
鈥?General Purpose
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
RHRU7570
RHRU7580
RHRU7590
RHRU75100
PACKAGE
TO-218
TO-218
TO-218
TO-218
BRAND
RHRU7570
RHRU7580
RHRU7590
RHRU75100
Package
JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Speci鏗乪d
RHRU7570
RHRU7580
800
800
800
75
150
750
190
50
-65 to +175
RHRU7590 RHRU75100 UNITS
900
900
900
75
150
750
190
50
-65 to +175
1000
1000
1000
75
150
750
190
50
-65 to +175
V
V
V
A
A
A
W
mj
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Recti鏗乪d Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +52
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
700
700
700
75
150
750
190
Avalanche Energy (L = 40mH) (See Figures 10 and 11) . . . . . . . . . . E
AVL
50
Operating and Storage Temperature. . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to +175
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright 漏 Intersil Corporation 1999

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