RHRU5040, RHRU5050, RHRU5060
Data Sheet
April 1995
File Number
3919.1
50A, 400V - 600V Hyperfast Diodes
RHRU5040, RHRU5050 and RHRU5060 (TA49065) are
hyperfast diodes with soft recovery characteristics
(t
RR
< 45ns). They have half the recovery time of ultrafast
diodes and are silicon nitride passivated ion-implanted epi-
taxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and recti鏗乪rs in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Features
鈥?Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<45ns
鈥?Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
鈥?Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . .600V
鈥?Avalanche Energy Rated
鈥?Planar Construction
Applications
鈥?Switching Power Supplies
鈥?Power Switching Circuits
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
RHRU5040
RHRU5050
RHRU5060
PACKAGE
TO-218
TO-218
TO-218
BRAND
RHRU5040
RHRU5050
RHRU5060
鈥?General Purpose
Package
JEDEC STYLE TO-218
ANODE
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Speci鏗乪d
RHRU5040
RHRU5050
500
500
500
50
100
500
150
40
-65 to +175
RHRU5060
600
600
600
50
100
500
150
40
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o
C
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Recti鏗乪d Forward Current . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +93
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . T
STG
, T
J
400
400
400
50
100
500
150
40
-65 to +175
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright 漏 Intersil Corporation 1999
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