RHRU50120
April 1995
File Number
3946.1
50A, 1200V Hyperfast Diode
The RHRU50120 (TA49100) are hyperfast diodes with soft
recovery characteristics (t
RR
< 85ns). They have half the
recovery time of ultrafast diodes and are silicon nitride passi-
vated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and recti鏗乪rs in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Features
鈥?Hyperfast with Soft Recovery . . . . . . . . . . . . . . . .<85ns
鈥?Operating Temperature . . . . . . . . . . . . . . . . . . . +175
o
C
鈥?Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . .1200V
鈥?Avalanche Energy Rated
鈥?Planar Construction
Applications
鈥?Switching Power Supplies
鈥?Power Switching Circuits
鈥?General Purpose
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
RHRU50120
PACKAGE
TO-218
BRAND
RHRU50120
Package
SINGLE LEAD JEDEC STYLE TO-218
ANODE
NOTE: When ordering, use the entire part number.
CATHODE
(FLANGE)
Symbol
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Speci鏗乪d
Peak Repetitive Reverse Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= 50
o
C)
Repetitive Peak Surge Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
Avalanche Energy (See Figures 10 and 11). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
RHRU50120
1200
1200
1200
50
100
500
150
50
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright 漏 Intersil Corporation 1999
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