RHRU15090, RHRU150100
April 1995
File Number 3589.2
150A, 900V - 1000V Hyperfast Diodes
RHRU15090 and RHRU150100 (TA49072) are hyperfast
diodes with soft recovery characteristics (t
RR
< 90ns). They
have half the recovery time of ultrafast diodes and are silicon
nitride passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/clamp-
ing diodes and recti鏗乪rs in a variety of switching power sup-
plies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits reduc-
ing power loss in the switching transistors.
Features
鈥?Hyperfast with Soft Recovery<90ns
鈥?Operating Temperature+175
o
C
鈥?Reverse Voltage Up To1000V
鈥?Avalanche Energy Rated
鈥?Planar Construction
Applications
鈥?Switching Power Supplies
鈥?Power Switching Circuits
鈥?General Purpose
Ordering Information
PACKAGING AVAILABILITY
PART NUMBER
RHRU15090
RHRU150100
PACKAGE
TO-218
TO-218
BRAND
RHRU15090
RHR150100
Package
JEDEC STYLE TO-218
ANODE
CATHODE
(FLANGE)
NOTE: When ordering, use the entire part number.
Symbol
K
A
Absolute Maximum Ratings
T
C
= +25
o
C, Unless Otherwise Speci鏗乪d
RHRU15090
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V
R
Average Recti鏗乪d Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
F(AV)
(T
C
= +42
o
C)
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Square Wave, 20kHz)
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .P
D
Avalanche Energy (L = 40mH) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T
STG
, T
J
900
900
900
150
300
1500
375
50
-65 to +175
RHRU150100
1000
1000
1000
150
300
1500
375
50
-65 to +175
UNITS
V
V
V
A
A
A
W
mj
o
C
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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