RHN7150 Datasheet

IC型號(hào)：
RHN7150
PDF描述：
TRANSISTOR N-CHANNEL
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Provisional Data Sheet No. PD-9.720A

REPETITIVE AVALANCHE AND dv/dt RATED

HEXFET TRANSISTOR

廬

IRHN7150

IRHN8150

N-CHANNEL

MEGA RAD HARD

100 Volt, 0.055鈩? MEGA RAD HARD HEXFET

鈩?/div>

International Rectifier鈥檚 MEGA RAD HARD technology

HEXFETs demonstrate excellent threshold voltage sta-

bility and breakdown voltage stability at total radiation

doses as high as 1 x 10

Rads (Si). Under

identical

pre-

and post-radiation test conditions, International Rectifier鈥檚

RAD HARD HEXFETs retain

identical

electrical specifi-

cations up to 1 x 10

Rads (Si) total dose. At 1 x 10

Rads

(Si) total dose, under the same pre-dose conditions, only

minor shifts in the electrical specifications are observed

and are so specified in table 1. No compensation in gate

drive circuitry is required. In addition, these devices are

capable of surviving transient ionization pulses as high

as 1 x 10

Rads (Si)/Sec, and return to normal operation

within a few microseconds. Single Event Effect (SEE)

testing of International Rectifier RAD HARD HEXFETs

has demonstrated virtual immunity to SEE failure. Since

the MEGA RAD HARD process utilizes International

Rectifier鈥檚 patented HEXFET technology, the user can

expect the highest quality and reliability in the industry.

RAD HARD HEXFET transistors also feature all of the

well-established advantages of MOSFETs, such as volt-

age control, very fast switching, ease of paralleling and

temperature stability of the electrical parameters.

They are well-suited for applications such as switching

power supplies, motor controls, inverters, choppers, au-

dio amplifiers and high-energy pulse circuits in space and

weapons environments.

Product Summary

Part Number

IRHN7150

IRHN8150

DSS

100V

DS(on)

0.055鈩?/div>

34A

Features:

Radiation Hardened up to 1 x 10

Rads (Si)

Single Event Burnout (SEB) Hardened

Single Event Gate Rupture (SEGR) Hardened

Gamma Dot (Flash X-Ray) Hardened

Neutron Tolerant

Identical Pre- and Post-Electrical Test Conditions

Repetitive Avalanche Rating

Dynamic dv/dt Rating

Simple Drive Requirements

Ease of Paralleling

Hermetically Sealed

Surface Mount

Light-weight

Absolute Maximum Ratings

Parameter

I D @ VGS = 12V, TC = 25擄C Continuous Drain Current

ID @ VGS = 12V, TC = 100擄C Continuous Drain Current

IDM

Pulsed Drain Current

聦

PD @ TC = 25擄C

VGS

EAS

I AR

EAR

dv/dt

TSTG

Max. Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

Single Pulse Avalanche Energy

聧

Avalanche Current

聦

Repetitive Avalanche Energy

聦

Peak Diode Recovery dv/dt

聨

Operating Junction

Storage Temperature Range

Package Mounting Surface Temperature

Weight

136

150

1.2

鹵20

500

5.5

-55 to 150

Pre-Radiation

IRHN7150, IRHN8150

Units

W/K

聬

V/ns

To Order

300 (for 5 sec.)

2.6 (typical)

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