RGP02-12E THRU RGP02-20E
Vishay Semiconductors
formerly General Semiconductor
Case Style GP10E
Glass Passivated Junction
Fast Switching Rectifier
Features
Reverse Voltage
1200 to 2000V
Forward Current
0.5A
ed*
ent
Pat
0.107 (2.7)
0.080 (2.0)
DIA.
廬
1.0 (25.4)
MIN.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.026 (0.66)
0.023 (0.58)
DIA.
鈥?Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
鈥?High temperature metallurgically bonded construction
鈥?Capable of meeting environmental standards of
MIL-S-19500
鈥?For use in high frequency rectifier circuits
鈥?Fast switching for high efficiency
鈥?Cavity-free glass passivated junction
鈥?0.5 Ampere operation at T
A
=55擄C with no thermal
runaway
鈥?Typical I
R
less than 0.2碌A(chǔ)
鈥?High temperature soldering guaranteed:
350擄C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3kg) tension
Mechanical Data
Case:
Molded plastic over glass body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.012 oz., 0.3 g
Ratings at 25擄C ambient temperature unless otherwise specified.
Dimensions in inches and (millimeters)
*
Glass-plastic encapsulation technique is covered by
Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics
Parameter
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375" (9.5mm) lead length at T
A
=55擄C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Typical thermal resistance
(1)
Operating junction and storage temperature range
Symbols
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
R
螛JA
R
螛JL
T
J,
T
STG
RGP02
-12E
1200
840
1200
RGP02
-14E
1400
980
1400
RGP02
-16E
1600
1120
1600
0.5
20
65
30
-65 to +175
RGP02
-18E
1800
1260
1800
RGP02
-20E
2000
1400
2000
Units
V
V
V
A
A
擄C/W
擄C
Electrical Characteristics
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time at
I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
Typical junction capacitance at 4.0V, 1MHz
Ratings at 25擄C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 0.1A
T
A
=25擄C
T
A
=125擄C
V
F
I
R
t
rr
C
J
1.8
5.0
50
300
5.0
V
碌A(chǔ)
ns
pF
Note:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5mm) lead length, P.C.B. mounted
Document Number 88699
16-Jan-03
www.vishay.com
1
VISHAY
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