鈮?/div>
3.0V
@V
GE
= 15V, I
C
= 24A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
These new short circuit rated devices are especially suited for motor control
and other applications requiring short circuit withstand capability.
TO-220AB
Absolute Maximum Ratings
Parameter
V
CES
I
C
@ T
C
= 25擄C
I
C
@ T
C
= 100擄C
I
CM
I
LM
t
sc
V
GE
E
ARV
P
D
@ T
C
= 25擄C
P
D
@ T
C
= 100擄C
T
J
T
STG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
600
40
24
80
80
10
鹵20
15
160
65
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf鈥n (1.1N鈥)
Units
V
A
碌s
V
mJ
W
擄C
Thermal Resistance
Parameter
R
胃
JC
R
胃
CS
R
胃
JA
Wt
Junction-to-Case
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Typ.
鈥?/div>
0.50
鈥?/div>
2 (0.07)
Max.
0.77
鈥?/div>
80
鈥?/div>
Units
擄C/W
g (oz)
Revision 1
C-313
To Order
RGBC40M相關(guān)型號(hào)PDF文件下載
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英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24...
IRF
-
英文版
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=24...
IRF [Inter...
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2
