RFW2N06RLE
Data Sheet
July 1999
File Number
2838.3
2A, 60V, 0.160 Ohm, Logic Level,
N-Channel Power MOSFET
The RFW2N06RLE N-Channel, logic level, ESD protected,
power MOSFET is manufactured using the MegaFET
process. This process, which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
The RFW2N06RLE was designed for use with logic level
(5V) driving sources in applications such as programmable
controllers, automotive switching, switching regulators,
switching converters, motor and relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA9861.
Features
鈥?2A, 60V
鈥?r
DS
(on) = 0.160鈩?/div>
鈥?UIS Rating Curve (Single Pulse)
鈥?Design Optimized For 5 Volt Gate Drive
鈥?Can be Driven Directly from CMOS, NMOS, TTL
Circuits
鈥?Compatible with Automotive Drive Requirements
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Electrostatic Discharge Protected
Ordering Information
PART NUMBER
RFW2N06RLE
PACKAGE
HEXDIP
BRAND
RFW2N06RLE
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
NOTE: When ordering, use the entire part number.
Symbol
D
G
S
Packaging
4 PIN HEXDIP
DRAIN
GATE
SOURCE
6-283
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
INTERSIL
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