RFT1P06E
Data Sheet
August 1999
File Number
4495.1
1.4A, 60V, 0.285 Ohm, ESD Rated,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49044.
Features
鈥?1.4A, 60V
鈥?r
DS(ON)
= 0.285鈩?/div>
鈥?2kV ESD Protected
鈥?Temperature Compensating PSPICE
廬
Model
鈥?SPICE Thermal Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?150
o
C Operating Temperature
鈥?Related Literature
- TB334, 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFT1P06E
PACKAGE
SOT-223
BRAND
R1P06E
Symbol
D
NOTE: RFT1P06E is available only in tape and reel.
G
S
Packaging
SOT-223
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
4-171
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999.
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