RFT1P06E Datasheet

IC型號：
RFT1P06E
PDF描述：
1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET
文件大?。?/label>
86.63KB
PDF頁數(shù)：
8頁
芯片廠家：
INTERSIL

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RFT1P06E

Data Sheet

August 1999

File Number

4495.1

1.4A, 60V, 0.285 Ohm, ESD Rated,

P-Channel Power MOSFET

These products are P-Channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI circuits,

gives optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49044.

Features

鈥?1.4A, 60V

鈥?r

DS(ON)

= 0.285鈩?/div>

鈥?2kV ESD Protected

鈥?Temperature Compensating PSPICE

廬

Model

鈥?SPICE Thermal Model

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?150

C Operating Temperature

鈥?Related Literature

- TB334, 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFT1P06E

PACKAGE

SOT-223

BRAND

R1P06E

Symbol

NOTE: RFT1P06E is available only in tape and reel.

Packaging

SOT-223

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

4-171

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE廬 is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999.

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RFT1P06E

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1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET

RFT1P06E
RFT1P06E

英文版

1.4A, 60V, 0.285 Ohm, ESD Rated, P-Channel Power MOSFET

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RFT1P06E

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