RFP8N20 Datasheet

IC型號：
RFP8N20
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RFP8N20L

Data Sheet

July 1999

File Number

1514.3

8A, 200V, 0.600 Ohm, Logic Level,

N-Channel Power MOSFET

This N-Channel enhancement mode silicon gate power 鏗乪ld

effect transistor is speci鏗乧ally designed for use with logic

level (5V) driving sources in applications such as

programmable controllers, automotive switching and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated

conduction at gate biases in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic circuit

supply voltages.

Formerly developmental type TA09534.

Features

鈥?8A, 200V

鈥?r

DS(ON)

= 0.600鈩?/div>

鈥?Design Optimized for 5V Gate Drives

鈥?Can be Driven Directly from QMOS, NMOS,

TTL Circuits

鈥?Compatible with Automotive Drive Requirements

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedence

Ordering Information

PART NUMBER

RFP8N20L

PACKAGE

TO-220AB

BRAND

RFP8N20L

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

NOTE: When ordering, include the entire part number.

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

6-278

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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