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RFP7N40 Datasheet

  • RFP7N40

  • 7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs

  • 51.23KB

  • 4頁(yè)

  • INTERSIL   INTERSIL

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Semiconductor
RFM7N35, RFM7N40,
RFP7N35, RFP7N40
7A, 350V and 400V, 0.75 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17424.
July 1998
Features
鈥?7A, 350V and 400V
鈥?r
DS(ON)
= 0.75鈩?/div>
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
RFM7N35
RFM7N40
RFP7N35
RFP7N40
PACKAGE
TO-204AA
TO-204AA
TO-220AB
TO-220AB
BRAND
RFM7N35
RFM7N40
RFP7N35
RFP7N40
S
G
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
DRAIN
(TAB)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1998
File Number
1536.2
5-1

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  • 英文版
    7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs
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    7A, 350V and 400V, 0.75 Ohm, N-Channel Power MOSFETs
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