RFG70N06, RFP70N06, RF1S70N06SM
Data Sheet
July 1999
File Number
3206.5
70A, 60V, 0.014 Ohm, N-Channel Power
MOSFETs
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as
switching regulators, switching converters, motor drivers and
relay drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA49007.
Features
鈥?70A, 60V
鈥?r
DS(on)
= 0.014鈩?/div>
鈥?Temperature Compensated PSPICE
廬
Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve (Single Pulse)
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFG70N06
RFP70N06
RF1S70N06SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG70N06
RFP70N06
F1S70N06
Symbol
D
G
NOTE: When ordering use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, e.g. RF1S70N06SM9A.
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
4-474
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
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