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RFP6N45 Datasheet

  • RFP6N45

  • 6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs

  • 4頁(yè)

  • INTERSIL   INTERSIL

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Semiconductor
RFM6N45, RFP6N45,
RFP6N50
6A, 450V and 500V, 1.250 Ohm,
N-Channel Power MOSFETs
Description
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors speci鏗乧ally designed for appli-
cations such as switching regulators, switching converters,
motor drivers, relay drivers, and drivers for high power bipo-
lar switching transistors requiring high speed and low gate
drive power. These types can be operated directly from inte-
grated circuits.
Formerly developmental type TA17425.
September 1998
Features
鈥?6A, 450V and 500V
鈥?r
DS(ON)
= 1.250鈩?/div>
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedence
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
[ /Title
(RFM6
N45,
RFP6N4
5,
RFP6N5
0)
/Subject
(6A,
450V
and
500V,
1.250
Ohm, N-
Channel
Power
MOS-
FETs)
/Author
()
/Key-
words
(Harris
Semi-
conduc-
tor, N-
Channel
Power
MOS-
FETs,
TO-
204AA,
TO-
220AB)
/Creator
()
/DOCIN
Symbol
D
Ordering Information
PART NUMBER
RFM6N45
RFP6N45
RFP6N50
PACKAGE
TO-204AA
TO-204AA
TO-220AB
BRAND
RFM6N45
RFP6N45
RFP6N50
S
G
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1998
File Number
1494.2
5--1

RFP6N45相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
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  • 英文版
    6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
    INTERSIL
  • 英文版
    6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
    INTERSIL [...
  • 英文版
    6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
    INTERSIL
  • 英文版
    6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
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    P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
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    P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
    ETC [ETC]
  • 英文版
    P CHANNEL ENHANCEMENT MODE POWER FIELD EFFECT TRANSISTORS
    ETC
  • 英文版
    -6A, -80V and -100V, 0.600 Ohm, P-Channel Power MOSFETs
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    INTERSIL [...
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