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RFP60P03 Datasheet

  • RFP60P03

  • 60A, 30V, 0.027 Ohm, P-Channel Power MOSFETs

  • 7頁

  • INTERSIL   INTERSIL

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RFG60P03, RFP60P03, RF1S60P03SM
Data Sheet
July 1999
File Number
3951.3
60A, 30V, 0.027 Ohm, P-Channel Power
MOSFETs
These P-Channel power MOSFETs are manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI integrated circuits gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49045.
Features
鈥?60A, 30V
鈥?r
DS(ON)
= 0.027鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFG60P03
RFP60P03
RF1S60P03SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG60P03
RFP60P03
F1S60P03
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in tape and reel, i.e. RF1S60P03SM9A.
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
JEDEC TO-220AB
DRAIN
(FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
4-140
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

RFP60P03 產品屬性

  • Fairchild Semiconductor

  • P-Channel

  • - 30 V

  • +/- 20 V

  • 60 A

  • 0.027 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220AB

  • 40 ns

  • - 55 C

  • 176 W

  • 75 ns

  • 35 ns

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