RFP50N06 Datasheet

IC型號(hào)：
RFP50N06
PDF描述：
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs
文件大小：
375.53KB
PDF頁(yè)數(shù)：
8頁(yè)
芯片廠家：
FAIRCHILD

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RFG50N06, RFP50N06, RF1S50N06SM

Data Sheet

January 2002

50A, 60V, 0.022 Ohm, N-Channel Power

MOSFETs

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49018.

Features

鈥?50A, 60V

鈥?r

DS(ON)

= 0.022

鈩?/div>

鈥?Temperature Compensating PSPICE

廬

Model

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?175

C Operating Temperature

Symbol

Ordering Information

PART NUMBER

RFG50N06

RFP50N06

RF1S50N06SM

PACKAGE

TO-247

TO-220AB

TO-263AB

BRAND

RFG50N06

RFP50N06

F1S50N06

NOTE: When ordering, use the entire part number. Add the suf鏗亁, 9A,

to obtain the TO-263AB variant in tape and reel, i.e. RF1S50N06SM9A.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(BOTTOM

SIDE METAL)

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

GATE

SOURCE

DRAIN

(FLANGE)

漏2002 Fairchild Semiconductor Corporation

RFG50N06, RFP50N06, RF1S50N06SM Rev. B

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
400
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點(diǎn)
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
50A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
22 毫歐 @ 50A，10V
Id 時(shí)的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
150nC @ 20V
輸入電容 (Ciss) @ Vds
2020pF @ 25V
功率 - 最大
131W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件

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