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RFP50N05L Datasheet

  • RFP50N05L

  • 50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

  • 55.55KB

  • 6頁

  • INTERSIL   INTERSIL

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RFG50N05L, RFP50N05L
Data Sheet
July 1999
File Number
2424.3
50A, 50V, 0.022 Ohm, Logic Level,
N-Channel Power MOSFETs
These are logic-level N-channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic-level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor relay
drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate bias in
the 3V - 5V range, thereby facilitating true on-off power
control directly from integrated circuit supply voltages.
Formerly developmental type TA09872.
Features
鈥?50A, 50V
鈥?r
DS(ON)
= 0.022鈩?/div>
鈥?UIS SOA Rating Curve (Single Pulse)
鈥?Design Optimized for 5V Gate Drive
鈥?Can be Driven Directly from CMOS, NMOS, TTL Circuits
鈥?Compatible with Automotive Drive Requirements
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFG50N05L
RFP50N05L
PACKAGE
TO-247
TO-220AB
BRAND
RFG50N05L
RFP50N05L
Symbol
D
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RFP50N05L9A.
G
S
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
6-212
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

RFP50N05L 產(chǎn)品屬性

  • 400

  • 分離式半導(dǎo)體產(chǎn)品

  • FET - 單

  • -

  • MOSFET N 通道，金屬氧化物

  • 邏輯電平門

  • 50V

  • 50A

  • 22 毫歐 @ 50A，5V

  • 2V @ 250µA

  • 140nC @ 10V

  • -

  • 110W

  • 通孔

  • TO-220-3

  • TO-220AB

  • 管件

RFP50N05L相關(guān)型號(hào)PDF文件下載

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  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 120V V(BR)DSS | 5A I(D) | ...
    ETC
  • 英文版
    TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 5A I(D) | ...
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  • 英文版
    50A, 50V, 0.022 Ohm, N-Channel Power MOSFETs
    INTERSIL
  • 英文版
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    INTERSIL [...
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    INTERSIL [...
  • 英文版
    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
    INTERSIL
  • 英文版
    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
    FAIRCHILD
  • 英文版
    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
    INTERSIL [...
  • 英文版
    50A, 50V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs
    FAIRCHILD ...
  • 英文版
    50A, 60V, 0.022 Ohm, Logic Level N-Channel Power MOSFETs
    INTERSIL
  • 英文版
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