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RFP4N100 Datasheet

  • RFP4N100

  • 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFET...

  • 49.85KB

  • 6頁

  • INTERSIL   INTERSIL

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RFP4N100, RF1S4N100SM
Data Sheet
August 1999
File Number
2457.4
4.3A, 1000V, 3.500 Ohm, High Voltage,
N-Channel Power MOSFETs
The RFP4N100 and RFP4N100SM are N-Channel
enhancement mode silicon gate power field effect
transistors. They are designed for use in applications such
as switching regulators, switching converters, motor
drivers, relay drivers, and drivers for high power bipolar
switching transistors requiring high speed and low gate
drive power. This type can be operated directly from an
integrated circuit.
Formerly developmental type TA09850.
Features
鈥?4.3A, 1000V
鈥?r
DS(ON)
= 3.500鈩?/div>
鈥?UIS Rating Curve (Single Pulse)
鈥?-55
o
C to 150
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
PART NUMBER
RFP4N100
RF1S4N100SM
PACKAGE
TO-220AB
TO-263AB
BRAND
RFP4N100
F1S4N100
G
S
NOTE: When ordering, use the entire part number.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
GATE
SOURCE
JEDEC TO-263AB
DRAIN
(FLANGE)
4-528
CAUTION: These devices are sensitive to electrostatic discharge; follow properS ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

RFP4N100 產(chǎn)品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 1000 V

  • +/- 20 V

  • 4.3 A

  • 3.5 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220AB

  • 50 ns

  • - 55 C

  • 150 W

  • 50 ns

  • 170 ns

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