RFP4N06 Datasheet

IC型號：
RFP4N06
PDF描述：
4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs
文件大?。?/label>
44.08KB
PDF頁數(shù)：
5頁
芯片廠家：
INTERSIL

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上傳產(chǎn)品規(guī)格書

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RFP4N05, RFP4N06

June 1999

File Number

2880.2

4A, 50V and 60V, 0.800 Ohm, N-Channel

Power MOSFETs

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09378.

Features

鈥?4A, 50V and 60V

鈥?r

DS(ON)

= 0.800鈩?/div>

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

RFP4N05

RFP4N06

PACKAGE

TO-220AB

BRAND

RFP4N05

RFP4N06

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

4-523

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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