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RFP4N06L Datasheet

  • RFP4N06L

  • 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOS...

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RFP4N05L, RFP4N06L
Data Sheet
July 1999
File Number
2876.2
4A, 50V and 60V, 0.800 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP4N05L and RFP4N06L are N-Channel enhancement
mode silicon gate power field effect transistors designed for
applications such as switching regulators, switching
converters, motor drivers, relay drivers and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09520.
Features
鈥?4A, 50V and 60V
鈥?r
DS(ON)
= 0.800鈩?/div>
鈥?Design Optimized for 5V Gate Drives
鈥?Can be Driven Directly from QMOS, NMOS,
TTL Circuits
鈥?Compatible with Automotive Drive Requirements
鈥?SOA is Power-Dissipation Limited
鈥?Nanosecond Switching Speeds
Ordering Information
PART NUMBER
RFP4N05L
RFP4N06L
PACKAGE
TO-220AB
TO-220AB
BRAND
RFP4N05L
RFP4N06L
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEL TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-274
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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