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RFP4N05 Datasheet

  • RFP4N05

  • 4A, 50V and 60V, 0.800 Ohm, N-Channel Power MOSFETs

  • 5頁

  • INTERSIL   INTERSIL

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RFP4N05, RFP4N06
June 1999
File Number
2880.2
4A, 50V and 60V, 0.800 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA09378.
Features
鈥?4A, 50V and 60V
鈥?r
DS(ON)
= 0.800鈩?/div>
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Symbol
D
Ordering Information
G
PART NUMBER
RFP4N05
RFP4N06
PACKAGE
TO-220AB
TO-220AB
BRAND
RFP4N05
RFP4N06
S
NOTE: When ordering, include the entire part number.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
4-523
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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