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RFP45N03L Datasheet

  • RFP45N03L

  • 45A, 30V, 0.022 Ohm, Logic Level, N-Channel Power MOSFETs

  • 7頁(yè)

  • INTERSIL   INTERSIL

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Semiconductor
RFP45N03L,
RF1S45N03L, RF1S45N03LSM
45A, 30V, 0.022 Ohm,
Logic Level, N-Channel Power MOSFETs
Description
These are N-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum utili-
zation of silicon, resulting in outstanding performance. They
were designed for use in applications such as switching reg-
ulators, switching converters, motor drivers and relay drivers.
These transistors can be operated directly from integrated
circuits.
Formerly developmental type TA49030.
September 1998
Features
鈥?45A, 30V
鈥?r
DS(ON)
= 0.022鈩?/div>
鈥?/div>
Temperature Compensating
PSPICE Model
鈥?Can be Driven Directly from CMOS, NMOS, and TTL
Circuits
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
[ /Title
(RFP45
N03L,
RF1S45
N03L,
RF1S45
N03LS
M)
/Subject
(45A,
30V,
0.022
Ohm,
Symbol
D
Ordering Information
PART NUMBER
RFP45N03L
RF1S45N03L
RF1S45N03LSM
PACKAGE
TO-220AB
TO-262AA
TO-263AB
BRAND
FP45N03L
F45N03L
F45N03L
S
G
NOTE: When ordering, use the entire part number. Add the suf鏗亁 9A, to
obtain the TO-263AB variant in tape and reel, e.g., RF1S45N03LSM9A.
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
DRAIN
(FLANGE)
JEDEC TO-262AA
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
漏
Harris Corporation 1998
File Number
4005.2
7-1

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