RFP40N10LE Datasheet

IC型號：
RFP40N10LE
PDF描述：
40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETs
文件大?。?/label>
415.42KB
PDF頁數(shù)：
8頁
芯片廠家：
INTERSIL

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RFG40N10LE, RFP40N10LE, RF1S40N10LESM

Data Sheet

October 1999

File Number

4061.5

40A, 100V, 0.040 Ohm, Logic Level

N-Channel Power MOSFETs

These N-Channel enhancement mode power MOSFETs are

manufactured using the latest manufacturing process

technology. This process, which uses feature sizes

approaching those of LSI integrated circuits gives optimum

utilization of silicon, resulting in outstanding performance.

They were designed for use in applications such as

switching regulators, switching converters, motor drivers and

relay drivers. These transistors can be operated directly from

integrated circuits.

Formerly developmental type TA49163.

Features

鈥?40A, 100V

鈥?r

DS(ON)

= 0.040鈩?/div>

鈥?Temperature Compensating PSPICE

廬

Model

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?175

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFG40N10LE

RFP40N10LE

RF1S40N10LESM

PACKAGE

TO-247

TO-220AB

TO-263AB

BRAND

FG40N10L

FP40N10L

F40N10LE

Symbol

NOTE: When ordering, use the entire part number. Add the suffix, 9A, to

obtain the TO-263AB variant in tape and reel, i.e. RF1S40N10LESM9A.

Packaging

JEDEC STYLE TO-247

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

DRAIN (FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

JEDEC TO-263AB

DRAIN

(FLANGE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

PSPICE廬 is a registered trademark of MicroSim Corporation.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

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