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RFP30P06 Datasheet

  • RFP30P06

  • 30A, 60V, 0.065 Ohm, P-Channel Power MOSFETs

  • 74.78KB

  • 8頁

  • INTERSIL   INTERSIL

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RFG30P06, RFP30P06, RF1S30P06SM
Data Sheet
July 1999
File Number
2437.3
30A, 60V, 0.065 Ohm, P-Channel Power
MOSFETs
These are P-Channel power MOSFETs manufactured using
the MegaFET process. This process, which uses feature
sizes approaching those of LSI circuits, gives optimum
utilization of silicon, resulting in outstanding performance.
They are designed for use in applications such as switching
regulators, switching converters, motor drivers, and relay
drivers. These transistors can be operated directly from
integrated circuits.
Formerly developmental type TA09834.
Features
鈥?30A, 60V
鈥?r
DS(ON)
= 0.065鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFG30P06
RFP30P06
RF1S30P06SM
PACKAGE
TO-247
TO-220AB
TO-263AB
BRAND
RFG30P06
RFP30P06
Symbol
D
G
F1S30P06
S
NOTE: When ordering, use the entire part number. Add the suffix 9A
to obtain the TO-263AB variant in tape and reel, i.e. RF1S30P06SM9A.
Packaging
JEDEC STYLE TO-247
SOURCE
DRAIN
GATE
DRAIN
(BOTTOM
SIDE METAL)
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
4-133
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

RFP30P06 產(chǎn)品屬性

  • Fairchild Semiconductor

  • P-Channel

  • - 60 V

  • +/- 20 V

  • 30 A

  • 0.065 Ohms

  • Single

  • + 175 C

  • Through Hole

  • TO-220AB

  • 18 ns

  • - 55 C

  • 135 W

  • 23 ns

  • 28 ns

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