RFP30N06LE Datasheet

IC型號：
RFP30N06LE
PDF描述：
30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power ...
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186.10KB
PDF頁數(shù)：
8頁
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FAIRCHILD

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RFP30N06LE, RF1S30N06LESM

Data Sheet

January 2004

30A, 60V, ESD Rated, 0.047 Ohm, Logic

Level N-Channel Power MOSFETs

These are N-Channel power MOSFETs manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers and relay drivers. These transistors can be operated

directly from integrated circuits.

These transistors incorporate ESD protection and are

designed to withstand 2kV (Human Body Model) of ESD.

Formerly developmental type TA49027.

Features

鈥?30A, 60V

鈥?r

DS(ON)

= 0.047鈩?/div>

鈥?2kV ESD Protected

鈥?Temperature Compensating PSPICE

廬

Model

鈥?Peak Current vs Pulse Width Curve

鈥?UIS Rating Curve

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

RFP30N06LE

RF1S30N06LESM

PACKAGE

TO-220AB

TO-263AB

BRAND

P30N06LE

1S30N06L

NOTE: When ordering use the entire part number. Add suffix, 9A, to

obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.

Packaging

JEDEC TO-220AB

JEDEC TO-263AB

SOURCE

DRAIN

GATE

DRAIN (FLANGE)

GATE

SOURCE

DRAIN

(FLANGE)

漏2004 Fairchild Semiconductor Corporation

RFP30N06LE, RF1S30N06LESM Rev. B1

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標準包裝
400
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
60V
電流 - 連續(xù)漏極(Id) @ 25° C
30A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
47 毫歐 @ 30A，5V
Id 時的 Vgs(th)（最大）
2V @ 250µA
閘電荷(Qg) @ Vgs
62nC @ 10V
輸入電容 (Ciss) @ Vds
1350pF @ 25V
功率 - 最大
96W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件

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