RFP2P10 Datasheet

IC型號(hào)：
RFP2P10
PDF描述：
-2A, -80V and -100V, 3.500 Ohm, P-Channel Power MOSFETs
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43.60KB
PDF頁數(shù)：
5頁
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INTERSIL

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RFP2P08, RFP2P10

Semiconductor

Data Sheet

October 1998

File Number 2870.1

-2A, -80V and -100V, 3.500 Ohm,

P-Channel Power MOSFETs

These are P-Channel enhancement mode silicon gate

Features

鈥?-2A, -80V and -100V

鈥?r

DS(ON)

= 3.500鈩?/div>

[ /Title

power 鏗乪ld effect transistors designed for applications such

鈥?Related Literature

(RFP2P

as switching regulators, switching converters. motor drivers,

- TB334 鈥淕uidelines for Soldering Surface Mount

relay drivers, and drivers for high power bipolar switching

08,

Components to PC Boards

transistors requiring high speed and low gate drive power.

RFP2P

These types can be operated directly from integrated

Symbol

10)

circuits.

/Sub-

Formerly developmental type TA_____.

ject (-

2A, -

Ordering Information

80V

PART NUMBER

PACKAGE

BRAND

and -

RFP2P08

TO-220AB

RFP2P08

100V,

RFP2P10

TO-220AB

RFP2P10

3.500

NOTE: When ordering, use entire part number.

Ohm,

P-Chan-

nel

Packaging

Power

TO-220AB

MOS-

SOURCE

FETs)

DRAIN

GATE

/Author

()

DRAIN (FLANGE)

/Key-

words

(Harris

Semi-

conduc-

tor,

P-Chan-

nel

Power

MOS-

FETs,

TO-

220AB)

/Cre-

ator ()

/DOCI

NFO

pdf-

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

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