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RFP2N20L Datasheet

  • RFP2N20L

  • 2A, 200V, 3.500 Ohm, Logic Level, N-Channel Power MOSFET

  • 5頁

  • INTERSIL   INTERSIL

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RFP2N20L
Data Sheet
July 1999
File Number
2875.2
2A, 200V, 3.500 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP2N20L N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistor is speci鏗乧ally designed for use
with logic level (5V) driving sources in applications such as
programmable controllers, automotive switching, and
solenoid drivers. This performance is accomplished through
a special gate oxide design which provides full rated
conduction at gate biases in the 3V - 5V range, thereby
facilitating true on-off power control directly from logic circuit
supply voltages.
Formerly developmental type TA09532.
Features
鈥?2A, 200V
鈥?r
DS(ON)
= 3.500鈩?/div>
鈥?Design Optimized for 5V Gate Drives
鈥?Can be Driven Directly from QMOS, NMOS,
TTL Circuits
鈥?Compatible with Automotive Drive Requirements
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
Ordering Information
PART NUMBER
RFP2N20L
PACKAGE
TO-220AB
BRAND
RFP2N20L
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-256
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

RFP2N20L 產品屬性

  • Fairchild Semiconductor

  • N-Channel

  • 200 V

  • +/- 10 V

  • 2 A

  • 3.5 Ohms

  • Single

  • + 150 C

  • Through Hole

  • TO-220AB

  • 20 ns

  • - 55 C

  • 25 W

  • 10 ns

  • 25 ns

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