RFP2N12 Datasheet

IC型號：
RFP2N12
PDF描述：
2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs
文件大?。?/label>
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PDF頁數：
5頁
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Semiconductor

RFP2N12,

RFP2N15

2A, 120V and 150V, 1.750 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated cir-

cuits.

Formerly developmental type TA09196.

BRAND

RFP2N12

RFP2N15

September 1998

Features

鈥?2A, 120V and 150V

鈥?r

DS(ON)

= 1.750鈩?/div>

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

[ /Title

(RFP2N

12,

RFP2N1

/Subject

(2A,

120V

and

150V,

1.75

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

220AB)

/Creator

()

/DOCIN

FO pdf-

mark

Ordering Information

PART NUMBER

RFP2N12

RFP2N15

PACKAGE

TO-220AB

Symbol

NOTE: When ordering, include the entire part number.

Packaging

JEDEL TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

[ /Page-

Mode

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

2882.1

5-1

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