RFP2N10 Datasheet

IC型號：
RFP2N10
PDF描述：
2A, 80V and 100V, 1.05 Ohm, N-Channel Power MOSFETs
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Semiconductor

RFP2N08,

RFP2N10

2A, 80V and 100V, 1.05 Ohm,

N-Channel Power MOSFETs

Description

These are N-channel enhancement mode silicon gate power

鏗乪ld effect transistors designed for applications such as

switching regulators, switching converters. motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09282.

July 1998

Features

鈥?2A, 80V and 100V

鈥?r

DS(ON)

1.05鈩?/div>

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

RFP2N08

RFP2N10

PACKAGE

TO-220AB

BRAND

RFP2N08

RFP2N10

NOTE: When ordering, use entire part number.

Packaging

JEDEC TO-220AB

DRAIN

(FLANGE)

SOURCE

DRAIN

GATE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.

漏

Harris Corporation 1998

File Number

2883.1

5-1

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