RFP2N08L, RFP2N10L
Data Sheet
July 1999
File Number
2872.2
2A, 80V and 100V, 1.050 Ohm, Logic Level,
N-Channel Power MOSFETs
The RFP2N08L and RFP2N10L are N-Channel enhancement
mode silicon gate power field effect transistors specifically
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, and solenoid drivers. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to 5V
range, thereby facilitating true on-off power control directly
from logic circuit supply voltages.
Formerly developmental type TA0924.
Features
鈥?2A, 80V and 100V
鈥?r
DS(ON)
= 1.050鈩?/div>
鈥?Design Optimized for 5V Gate Drives
鈥?Can be Driven Directly from QMOS, NMOS, TTL Circuits
鈥?Compatible with Automotive Drive Requirements
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
Ordering Information
PART NUMBER
RFP2N08L
RFP2N10L
PACKAGE
TO-220AB
TO-220AB
BRAND
RFP2N08L
RFP2N10L
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
NOTE: When ordering, include the entire part number.
Symbol
D
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-248
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
INTERSIL
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