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RFP25N05L Datasheet

  • RFP25N05L

  • 25A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFET

  • 6頁(yè)

  • INTERSIL   INTERSIL

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RFP25N05L
Data Sheet
July 1999
File Number
2270.3
25A, 50V, 0.047 Ohm, Logic Level,
N-Channel Power MOSFET
The RFP25N05L is an N-Channel logic level power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. The RFP25N05L was
designed for use with logic level (5V) driving sources in
applications such as programmable controllers, automotive
switching, switching regulators, switching converters, motor
relay drivers and emitter switches for bipolar transistors. This
performance is accomplished through a special gate oxide
design which provides full rated conductance at gate biases
in the 3V to 5V range, thereby facilitating true on-off power
control directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Features
鈥?25A, 50V
鈥?r
DS(ON)
= 0.047鈩?/div>
鈥?UIS SOA Rating Curve (Single Pulse)
鈥?Design Optimized for 5V Gate Drives
鈥?Can be Driven Directly from CMOS, NMOS, TTL Circuits
鈥?Compatible with Automotive Drive Requirements
鈥?SOA is Power Dissipation Limited
鈥?Nanosecond Switching Speeds
鈥?Linear Transfer Characteristics
鈥?High Input Impedance
鈥?Majority Carrier Device
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFP25N05L
NOTE:
PACKAGE
TO-220AB
BRAND
RFP25N05L
Symbol
D
When ordering, include the entire part number.
G
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-243
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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