RFP22N10 Datasheet

IC型號：
RFP22N10
PDF描述：
22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs
文件大?。?/label>
52.87KB
PDF頁數(shù)：
6頁
芯片廠家：
INTERSIL

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RFP22N10, RF1S22N10SM

Data Sheet

July 1999

File Number

2385.3

22A, 100V, 0.080 Ohm, N-Channel Power

MOSFETs

These N-Channel power MOSFETs are manufactured using

the MegaFET process. This process, which uses feature

sizes approaching those of LSI integrated circuits gives

optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA9845.

Features

鈥?22A, 100V

鈥?r

DS(ON)

= 0.080鈩?/div>

鈥?UIS SOA Rating Curve (Single Pulse)

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?175

C Operating Temperature

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Ordering Information

PART NUMBER

RFP22N10

RF1S22N10SM

PACKAGE

TO-220AB

TO-263AB

BRAND

RFP22N10

F1S22N10

Symbol

NOTE: When ordering use the entire part number. Add the suffix, 9A,

to obtain the TO-263AB variant in tape and reel, e.g. RF1S22N10SM9A.

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

SOURCE

JEDEC TO-263AB

DRAIN

(FLANGE)

DRAIN

(FLANGE)

4-499

CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.

http://www.intersil.com or 407-727-9207

漏

Intersil Corporation 1999

標(biāo)準(zhǔn)包裝
400
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
標(biāo)準(zhǔn)型
漏極至源極電壓(Vdss)
100V
電流 - 連續(xù)漏極(Id) @ 25° C
22A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
80 毫歐 @ 22A，10V
Id 時的 Vgs(th)（最大）
4V @ 250µA
閘電荷(Qg) @ Vgs
150nC @ 20V
輸入電容 (Ciss) @ Vds
-
功率 - 最大
100W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件

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