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RFP15P06 Datasheet

  • RFP15P06

  • 15A, 60V, 0.150 Ohm, P-Channel Power MOSFETs

  • 8頁

  • INTERSIL   INTERSIL

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RFD15P06, RFD15P06SM, RFP15P06
Data Sheet
July 1999
File Number
3988.3
15A, 60V, 0.150 Ohm, P-Channel Power
MOSFETs
These P-Channel power MOSFETs are manufactured using
the MegaFET process. This process which uses feature
sizes approaching those of LSI integrated circuits, gives
optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA09833.
Features
鈥?15A, 60V
鈥?r
DS(ON)
= 0.150鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFD15P06
RFD15P06SM
RFP15P06
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
F15P06
F15P06
RFP15P06
Symbol
D
G
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in the tape and reel, i.e., RFD15P06SM9A.
S
Packaging
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-103
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999

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