RFP14N06
Data Sheet
July 1999
File Number
4002.3
14A, 60V, 0.100 Ohm, N-Channel Power
MOSFET
This N-Channel power MOSFET is manufactured using the
MegaFET process. This process which uses feature sizes
approaching those of LSI integrated circuits, gives optimum
utilization of silicon, resulting in outstanding performance. It
was designed for use in applications such as switching
regulators, switching convertors, motor drivers, and relay
drivers. This transistor can be operated directly from
integrated circuits.
Formerly developmental type TA09770.
Features
鈥?14A, 60V
鈥?r
DS(ON)
= 0.100鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
Ordering Information
PART NUMBER
RFP14N06
PACKAGE
TO-220AB
BRAND
RFP14N06
Symbol
D
NOTE: When ordering, use the entire part number.
G
S
Packaging
TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
4-492
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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