RFP12N10 Datasheet

IC型號：
RFP12N10
PDF描述：
12A, 80V and 100V, 0.200 Ohm, N-Channel Power MOSFETs
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RFM12N08, RFM12N10, RFP12N08, RFP12N10

Semiconductor

Data Sheet

October 1998

File Number 1386.2

[ /Title

(RFM12

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

N08,

RFM12

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

N10,

transistors requiring high speed and low gate drive power.

RFP12

These types can be operated directly from integrated

N08,

circuits.

RFP12

Formerly developmental type TA09594.

N10)

/Sub-

Ordering Information

ject

PART NUMBER

PACKAGE

BRAND

(12A,

80V and

RFM12N08

TO-204AA

RFM12N08

100V,

RFM12N10

TO-204AA

RFM12N10

0.2

RFP12N08

TO-220AB

RFP12N08

Ohm,

N-Chan-

RFP12N10

TO-220AB

RFP12N10

nel

NOTE: When ordering, use the entire part number.

Power

MOS-

Packaging

FETs)

/Author

JEDEC TO-204AA

()

DRAIN

/Key-

(FLANGE)

words

(Harris

Semi-

conduc-

tor, N-

SOURCE (PIN 2)

Chan-

GATE (PIN 1)

nel

Power

MOS-

FETs,

TO-

204AA,

TO-

220AB)

/Cre-

12A, 80V and 100V, 0.200 Ohm, N-Channel

Power MOSFETs

Features

鈥?12A, 80V and 100V

鈥?r

DS(ON)

= 0.200鈩?/div>

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(TAB)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

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