RFP12N10L Datasheet

IC型號：
RFP12N10L
PDF描述：
12A, 100V, 0.200 Ohm, Logic Level, N-Channel Power MOSFET
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362.17KB
PDF頁數(shù)：
6頁
芯片廠家：
FAIRCHILD

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RFP12N10L

Data Sheet

January 2002

12A, 100V, 0.200 Ohm, Logic Level,

N-Channel Power MOSFET

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors speci鏗乧ally designed for use

with logic level (5V) driving sources in applications such as

programmable controllers, automotive switching and

solenoid drivers. This performance is accomplished through

a special gate oxide design which provides full rated

conduction at gate biases in the 3V to 5V range, thereby

facilitating true on-off power control directly from logic circuit

supply voltages.

Formerly developmental type TA09526.

Features

鈥?12A, 100V

鈥?r

DS(ON)

= 0.200

鈩?/div>

鈥?Design Optimized for 5V Gate Drives

鈥?Can be Driven Directly from QMOS, NMOS,

TTL Circuits

鈥?Compatible with Automotive Drive Requirements

鈥?SOA is Power-Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

Ordering Information

PART NUMBER

RFP12N10L

PACKAGE

TO-220AB

BRAND

F12N10L

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards

NOTE: When ordering, include the entire part number.

Symbol

Packaging

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(TAB)

漏2002 Fairchild Semiconductor Corporation

RFP12N10L Rev. B

產(chǎn)品培訓(xùn)模塊
High Voltage Switches for Power ProcessingSMPS Power Switch
標(biāo)準(zhǔn)包裝
400
類別
分離式半導(dǎo)體產(chǎn)品
家庭
FET - 單
系列
-
FET 型
MOSFET N 通道，金屬氧化物
FET 特點
邏輯電平門
漏極至源極電壓(Vdss)
100V
電流 - 連續(xù)漏極(Id) @ 25° C
12A
開態(tài)Rds（最大）@ Id, Vgs @ 25° C
200 毫歐 @ 12A，5V
Id 時的 Vgs(th)（最大）
2V @ 250µA
閘電荷(Qg) @ Vgs
-
輸入電容 (Ciss) @ Vds
900pF @ 25V
功率 - 最大
60W
安裝類型
通孔
封裝/外殼
TO-220-3
供應(yīng)商設(shè)備封裝
TO-220AB
包裝
管件

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