RFD12N06RLE, RFD12N06RLESM,
RFP12N06RLE
Data Sheet
July 1999
File Number 2407.4
12A, 60V, 0.135 Ohm, N-Channel, Logic
Level, Power MOSFETs
These N-Channel logic level ESD protected power
MOSFETs are manufactured using the MegaFET process.
This process, which uses feature sizes approaching those of
LSI integrated circuits, gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, automotive switching,
switching regulators, switching converters, motor drivers,
relay drivers, and emitter switches for bipolar transistors.
This performance is accomplished through a special gate
oxide design which provides full rated conductance at gate
biases in the 3V to 5V range, thereby facilitating true on-off
power control directly from logic circuit supply voltages.
Formerly developmental type TA09861.
Features
鈥?12A, 60V
鈥?r
DS(ON)
= 0.135鈩?/div>
鈥?Electrostatic Discharge Protected
鈥?UIS Rating Curve (Single Pulse)
鈥?Design Optimized for 5V Gate Drive
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
[ /Title
(RFD1
2N06R
LE,
RFD12
N06RL
ESM,
RFP12
N06RL
E)
/Sub-
ject
(12A,
60V,
0.135
Ohm,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
FETs)
/Autho
r ()
/Key-
words
(Inter-
sil
Corpo-
ration,
N-
Chan-
nel,
Logic
Level,
Power
MOS-
Symbol
D
Ordering Information
PART NUMBER
RFD12N06RLE
RFD12N06RLESM
RFP12N06RLE
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
12N6LE
12N6LE
12N06RLE
G
S
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-252AA variant in tape and reel, i.e., RFD12N06RLESM9A.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN
(FLANGE)
GATE
SOURCE
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
6-12
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207
|
Copyright
漏
Intersil Corporation 1999
INTERSIL
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