RFD10P03L, RFD10P03LSM, RFP10P03L
Data Sheet
July 1999
File Number
3515.2
10A, 30V, 0.200 Ohm, Logic Level,
P-Channel Power MOSFET
These products are P-Channel power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI circuits,
gives optimum utilization of silicon, resulting in outstanding
performance. They were designed for use in applications
such as switching regulators, switching converters, motor
drivers, and relay drivers. These transistors can be operated
directly from integrated circuits.
Formerly developmental type TA49205.
Features
鈥?10A, 30V
鈥?r
DS(ON)
= 0.200鈩?/div>
鈥?Temperature Compensating PSPICE
廬
Model
鈥?PSPICE Thermal Model
鈥?Peak Current vs Pulse Width Curve
鈥?UIS Rating Curve
鈥?175
o
C Operating Temperature
Symbol
D
Ordering Information
PART NUMBER
RFD10P03L
RFD10P03LSM
RFP10P03L
PACKAGE
TO-251AA
TO-252AA
TO-220AB
BRAND
10P03L
10P03L
F10P03L
G
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the
TO-252AA
variant in tape and reel, i.e.
RFD10P03LSM9A..
Packaging
JEDEC TO-251AA
JEDEC TO-252AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
GATE
SOURCE
DRAIN (FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
7-3
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
PSPICE廬 is a registered trademark of MicroSim Corporation.
http://www.intersil.com or 407-727-9207
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Copyright
漏
Intersil Corporation 1999
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