RFM6N45 Datasheet

IC型號(hào)：
RFM6N45
PDF描述：
6A, 450V and 500V, 1.250 Ohm, N-Channel Power MOSFETs
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36.72KB
PDF頁(yè)數(shù)：
4頁(yè)
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INTERSIL

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Semiconductor

RFM6N45, RFP6N45,

RFP6N50

6A, 450V and 500V, 1.250 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors speci鏗乧ally designed for appli-

cations such as switching regulators, switching converters,

motor drivers, relay drivers, and drivers for high power bipo-

lar switching transistors requiring high speed and low gate

drive power. These types can be operated directly from inte-

grated circuits.

Formerly developmental type TA17425.

September 1998

Features

鈥?6A, 450V and 500V

鈥?r

DS(ON)

= 1.250鈩?/div>

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedence

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

[ /Title

(RFM6

N45,

RFP6N4

RFP6N5

/Subject

(6A,

450V

and

500V,

1.250

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

204AA,

TO-

220AB)

/Creator

()

/DOCIN

Symbol

Ordering Information

PART NUMBER

RFM6N45

RFP6N45

RFP6N50

PACKAGE

TO-204AA

TO-220AB

BRAND

RFM6N45

RFP6N45

RFP6N50

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-204AA

DRAIN

(FLANGE)

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

SOURCE (PIN 2)

GATE (PIN 1)

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

1494.2

5--1

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