RFM4N35 Datasheet

IC型號(hào)：
RFM4N35
PDF描述：
4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs
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RFM4N35, RFM4N40, RFP4N35, RFP4N40

Semiconductor

Data Sheet

October 1998

File Number 1491.3

4A, 350V and 400V, 2.000 Ohm, N-Channel

Power MOSFETs

Features

鈥?4A, 350V and 400V

鈥?r

DS(ON)

= 2.000鈩?/div>

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

[ /Title

These are N-channel enhancement-mode silicon-gate

[ /Title

(RFM4N

power 鏗乪ld effect transistors designed for applications such

()

35,

as switching regulators, switching converters, motor drivers,

/Sub-

RFM4N

relay drivers, and drivers for high power bipolar switching

ject ()

40,

/Autho

transistors requiring high speed and low gate-drive power.

RFP4N3

These types can be operated directly from integrated

r ()

circuits.

/Key-

RFP4N4

Formerly developmental type TA17404.

words

()

Ordering Information

/Subject

/Cre-

PART NUMBER

PACKAGE

BRAND

(4A,()

ator

RFM4N35

TO-204AA

RFM4N35

350V

/DOCI

RFM4N40

TO-204AA

RFM4N40

and

NFO

RFP4N35

TO-220AB

RFP4N35

400V,

pdf-

RFP4N40

TO-220AB

RFP4N40

2.000

mark

Ohm, N-

NOTE: When ordering, use the entire part number.

Channel

[

Power

Packaging

/Page-

MOS-

Mode

JEDEC TO-204AA

FETs)

/Use-

/Author

Out-

DRAIN

()

lines

(FLANGE)

/Key-

/DOC-

words

VIEW

(Harris

pdf-

Semi-

mark

conduc-

SOURCE (PIN 2)

tor, N-

GATE (PIN 1)

Channel

Power

MOS-

FETs,

TO-

204AA,

TO-

220AB)

/Creator

()

Symbol

JEDEC TO-220AB

SOURCE

DRAIN

GATE

DRAIN

(FLANGE)

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

1-800-4-HARRIS

漏

Harris Corporation 1998

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RFM4N35

英文版

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

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英文版

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

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英文版

4A, 350V and 400V, 2.000 Ohm, N-Channel Power MOSFETs

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