RFM3N45, RFM3N50, RFP3N45, RFP3N50
Semiconductor
Data Sheet
October 1998
File Number 1384.2
3A, 450V and 500V, 3 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power 鏗乪ld effect transistors designed for applications such
as switching regulators, switching converters, motor drivers,
relay drivers, and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated
circuits.
Formerly developmental type TA17405.
Features
鈥?3A, 450V and 500V
鈥?r
DS(ON)
= 3鈩?/div>
鈥?Related Literature
- TB334 鈥淕uidelines for Soldering Surface Mount
Components to PC Boards鈥?/div>
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Ordering Information
PART NUMBER
RFM3N45
RFM3N50
RFP3N45
RFP3N50
PACKAGE
TO-204AA
TO-204AA
TO-220AB
TO-220AB
BRAND
RFM3N45
RFM3N50
RFP3N45
RFP3N50
G
S
NOTE: When ordering, use the entire part number.
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Packaging
JEDEC TO-204AA
DRAIN
(FLANGE)
JEDEC TO-220AB
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
1-800-4-HARRIS
|
Copyright
漏
Harris Corporation 1998
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