RFL4N12 Datasheet

IC型號(hào)：
RFL4N12
PDF描述：
4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs
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Semiconductor

RFL4N12,

RFL4N15

4A, 120V and 150V, 0.400 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA9192.

September 1998

Features

鈥?4A, 120V and 150V

鈥?r

DS(ON)

= 0.400鈩?/div>

鈥?SOA is Power Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Majority Carrier Device

[ /Title

(RFL4N

12,

RFL4N1

/Subject

(4A,

120V

and

150V,

0.400

Ohm, N-

Channel

Power

MOS-

FETs)

/Author

()

/Key-

words

(Harris

Semi-

conduc-

tor, N-

Channel

Power

MOS-

FETs,

TO-

205AF)

/Creator

()

/DOCIN

FO pdf-

mark

Ordering Information

PART NUMBER

RFL4N12

RFL4N15

PACKAGE

TO-205AF

BRAND

RFL4N12

RFL4N15

Symbol

NOTE: When ordering, use the entire part number.

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1998

File Number

1462.2

5-1

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RFL4N12

英文版

4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs

RFL4N12
RFL4N12

英文版

4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs

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RFL4N12
RFL4N15

英文版

4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs

RFL4N15
RFL4N15

英文版

4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs

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