RFL2N06 Datasheet

IC型號：
RFL2N06
PDF描述：
2A, 50V and 60V, 0.95 Ohm, N-Channel Power MOSFETs
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48.76KB
PDF頁數：
5頁
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Semiconductor

RFL2N05,

RFL2N06

2A, 50V and 60V, 0.95 Ohm,

N-Channel Power MOSFETs

Description

These are N-Channel enhancement mode silicon gate

power 鏗乪ld effect transistors designed for applications such

as switching regulators, switching converters, motor drivers,

relay drivers, and drivers for high power bipolar switching

transistors requiring high speed and low gate drive power.

These types can be operated directly from integrated

circuits.

Formerly developmental type TA09378.

January 1998

Features

鈥?2A, 50V and 60V

鈥?r

DS(ON)

= 0.95鈩?/div>

鈥?SOA is Power-Dissipation Limited

鈥?Nanosecond Switching Speeds

鈥?Linear Transfer Characteristics

鈥?High Input Impedance

鈥?Majority Carrier Device

鈥?Related Literature

- TB334 鈥淕uidelines for Soldering Surface Mount

Components to PC Boards鈥?/div>

Symbol

Ordering Information

PART NUMBER

RFL2N05

PACKAGE

TO-205AF

BRAND

RFL2N05

NOTE: When ordering, include the entire part number.

Packaging

JEDEC TO-205AF

DRAIN

(CASE)

GATE

SOURCE

CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.

漏

Harris Corporation 1997

File Number

1497.2

5-1

型號

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